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Modeling of resonant detection of terahertz (THz) radiation of Metal-Oxide-Semiconductor (MOS) field effect transistors (FETs) under the optical beating mode is studied in this paper. An analytical model is first proposed which covers all operation regions of FETs from sub-threshold to the strong inversion, and then is verified by the numerical tool which has been improved to simulate THz detection...
A numerical method is proposed to simulate the corresponding terahertz photoresponse which is induced by radiations between source-and-gate and gate-and-drain electrodes in field effect transistors. Simulations illustrate that the response of terahertz radiation in field effect transistor depends on the gate bias. The response contains contributions of different polarities which induced by radiations...
In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the...
<para> A silicon-based nanowire FET (SNWT) compact model is developed for circuit simulation. Starting from the solution of Poisson's equation, an accurate inversion charge expression is derived for SNWTs with arbitrary body doping concentration. The drain current, transconductance, output conductance, terminal charges, and capacitances are then calculated based on fundamental device physics...
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