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We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires...
We report a post-growth approach to increase the radiative recombination efficiency of GaAs nanowires, beyond what has been achieved using surface passivation. This is done by coupling the nanowires to resonant plasmonic nanocavities to reduce the radiative recombination lifetime of minority carriers, thereby increasing the radiative efficiency by an order of magnitude.
We present results on the design of GaAs and InP nanowire lasers. We will discuss the growth of high quantum efficiency, taper free photonic nanowires for laser applications and demonstrate room-temperature lasing from these nanowires.
III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.
III–V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the radiative lifetime of minority carriers in the nanowires is necessary for device applications. Due to the large surface area to volume ratio in the nanowires,...
Semiconductor nanowires grown via the vapour-liquid-solid (VLS) mechanism are promising for miniaturisation of optoelectronic devices. Efficient optoelectronic devices require these nanowires to have high quantum efficiency. While optimizing the growth process to eliminate bulk defects and achieve perfect surface passivation is one approach to increase the quantum efficiency of nanowires1, coupling...
In this work a transient grating experiment was used to explore the inplane transport properties and two-colour pump-probe and time resolved photolu-minescence experiments were used to explore the population dynamics of excitons in ZnO quantum wells. By implementing stepped barriers in such quantum wells we also show that the overlap of the electron and hole wavefunctions can be controlled.
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
We study the possibility of increasing the quantum efficiency of III–V semiconductor nanowire emitters using plasmonics. Results on the effect of plasmonic nanoparticle size, emitter-plasmonic nanoparticle distance and the initial quantum efficiency of the emitter on the quantum efficiency enhancement factor are presented.
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