The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We review the recent development of high efficiency single photon sources based on a single quantum dot in a photonic wire. Unlike cavity-based devices, very pure single photon emission and efficiencies exceeding 0.7 photon per pulse are jointly demonstrated under non-resonant pumping conditions. By placing a tip-shaped or trumpet-like tapering at the output end of the wire, a highly directional Gaussian...
Exciton-polariton lasers are operated in the strong light matter coupling regime. They promise low threshold operation since population inversion is not inherently necessary. Hence they are of great interest for next generation coherent light sources.
The quantum optical properties of two new infrared single photon centers in single crystal silicon are explored. The results suggest that the diamond nitrogen vacancy center may finally have a silicon-based competitor for quantum technologies.
We present recent results on 976nm mini-bars with superior beam divergence at highest power levels tailored for optimized fiber coupling. The emitters (4mm x 100µm) reach 10W cw output power at a conversion efficiency of 64% and a slow-axis divergence of 7° (95%), corresponding to a linear brightness of 3.3 W/mm mrad.
We will present methods we used to further improve the slow axis BPP without efficiency penalty. Results of performance for multi-KW direct diode laser system application with this technology will be presented as well.
We report on two-times narrower slow-axis divergence of 9xx nm broad area diode lasers resulting from reduction in allowed lateral modes. This enabled use of larger aperture broad area lasers to achieve 30% higher brightness.
Far-field widening in high-power lasers is mainly caused by lateral thermal lens formation. Pedestal heat sinking is shown to generate an inverse thermal lens leading to beam narrowing by destabilizing higher order lateral modes.
The brightness of broad area laser diodes is limited by a degradation of the beam quality at high output powers. To overcome this limit, a control of slow axis modes at high injection currents is necessary. In the present publication we show an approach to improve the beam quality with optical microstructures in high-power AlGaAs broad area laser diodes with an operating wavelength of 970 nm. The...
We apply a (1+2)-dimensional traveling wave model for simulations of broad-area semiconductor lasers and amplifiers. We discuss, how a periodic modulation of electrical contact in both spatial directions implies an angular filtering of the radiation.
We report on the design aspects of high performance diode lasers for application in high-brightness spectral beam combining and coherent beam combining modules. Key performance trade-offs are identified and potential solutions are explored.
Efficient DFB broad-area lasers enable spectrally-resolved measurements of lateral field profiles to high powers, indicating brightness is limited by both increasing numbers of guided modes and degradation of beam quality of low order modes.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.