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The threshold voltage (VT) control of gate-all-around (GAA) MOSFETs as an extreme case of multi-gate MOSFETs is studied. After breaking down the components constituting VT into several terms, their relative sizes are compared using TCAD technique and analytical calculation of quantum mechanical problem. As a result, the channel diameter is found to be an important knob to control VT of a GAA MOSFET,...
In this work, process conditions and geometric parameters for high-speed p-i-n silicon photodetector are optimized by device simulation. Efforts were made to build up criteria for device fabrication based on silicon epitaxy. For an optimized silicon photodetector, a bandwidth as wide as 80 GHz was obtained at 1 V. Furthermore, a way of increasing wavelength discriminations by introducing silicon-germanium...
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