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In this paper, first we have demonstrated the suitability of Plackett-Burman Design of Experiment (PB-DOE) method for the sensitivity analysis of a device and a circuit performance to inter- and intra-die process variations. Further, it is shown that PB-DOE method takes relatively less computational time and provides reasonable accuracy as compared to standard Monte Carlo Method. In the next part...
Recently, CMOS downsizing has been accelerated very aggressively in both production and research levels, and even beautiful transistor operation of several nm gate length CMOS devices were reported in conferences. However, many serious problems are expected for implementing small-geometry MOSFETs into large scale integrated circuits. It is still questionable if we can successfully introduce deep sub-10...
In this paper, the correlation between noise figure degradation and the degradation of DC characteristics during emitter-base reverse stress is studied. It was found that the generation-recombination centers, which introduce emitter-base reverse stress, have an influence on high-frequency noise characteristic degradation.
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