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In this work, strained large area graphene is used in the channel of Graphene-FET (G-FET) to realize the G-FET in logic application. The strain dependent quantum confinement effect in terms of quantum capacitance is investigated and a drain current model is proposed under tight binding approximation. The influence of strain on the performance of G-FET as a function of gate voltage, channel length...
The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that over critical thickness, energy of the films increases...
In case of MJSC residual strain is induced due to the change in lattice constants in different layers. So far our knowledge efficiency of multijunction solar cell (MJSC) has not been studied considering the strain effect on the energy bandgap of subcells. In this paper, we have analytically studied residual strain in different MJSC structures using multilayered strain model. Three structures are investigated...
The quasi-static capacitance-voltage (CV) characteristics of buried channel n-InGaSb MOSFET is investigated using SILVACO's ATLAS device simulation package. Self-consistent method is applied to solve the coupled one dimensional Schrödinger-Poisson equation taking into account of wave function penetration and strain effect. It is found that the CV profiles and threshold voltage are strongly depended...
This paper presents the evidence of strain relaxation and improved quality of MOVPE InxGa1−xN using step graded interlayers. A compositionally step-graded InxGa1−xN is grown on GaN template by controlling temperature from 750° to 900° C with optimum TMI/(TMI+TEG) molar ratio. Using two interlayers the lattice mismatch of 0.33, 0.31 and 0.59 between the successive layers are measured from reciprocal...
Strain- and crystal orientation-dependent optical properties of GaSb-based mid-infrared quantum well lasers are numerically studied by solving one-dimension Schrödinger equation. The simulation results demonstrate that there is a strong correlation of peak emission wavelength and optical gain with crystal orientation and strain.
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