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This article presents a detail study of the performance of CNT TFET taking into account of different dielectric strength of gate oxide materials. Here we have investigated the transfer characteristics, on/off current ratio (Ion/Ioff), subthreshold slope of the device using Non Equilibrium Greens Function (NEGF) formalism in tight binding frameworks. The results are obtained by solving the NEGF and...
This paper presents the gate oxide dielectric strength and its thickness-dependent performance of a graphene nanoribbon MOSFET (GNRMOSFET). Here we have studied the transfer characteristics, on/off current (ION/IOFF) ratio, subthreshold slope and drain induced barrier lowering (DIBL) of the device using Non Equilibrium Greens Function (NEGF) formalism in tight binding frameworks. The results are obtained...
A quasi-ballistic transport model for graphene FET (GFET) is analyzed in this work. The effect of top and back gate oxide layers of the model with different dielectrics are considered to analyze the device performance. A comparative study considering the equivalent oxide thickness (EOT) for the different oxide layers is done using the proposed model. It is found by the simulation results that the...
Here, we report the effect of channel thickness on the performance of a InGaSb-on-insulator FET with 15-nm gate length. The ballistic current-voltage characteristic is computed by nonequilibrium Green’s function method using thickness-dependent effective mass, which is extracted from tight binding dispersion. Simulation result reveals that the threshold voltage and subthreshold slope decrease with...
Effect of gate length on the ballistic performance of nanoscale In0.2Ga0.8Sb double gate n-MOSFET is studied. Non equilibrium greens function (NEGF) method is used to find the current-voltage characteristics. Well known SILVACO's ATLAS device simulation package is used to carry out the simulation. Three different gate length, 10nm, 13nm and 15 nm are analyzed. The simulation result shows that the...
The quasi-static capacitance-voltage (CV) characteristics of buried channel n-InGaSb MOSFET is investigated using SILVACO's ATLAS device simulation package. Self-consistent method is applied to solve the coupled one dimensional Schrödinger-Poisson equation taking into account of wave function penetration and strain effect. It is found that the CV profiles and threshold voltage are strongly depended...
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