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A quasi-ballistic transport model for graphene FET (GFET) is analyzed in this work. The effect of top and back gate oxide layers of the model with different dielectrics are considered to analyze the device performance. A comparative study considering the equivalent oxide thickness (EOT) for the different oxide layers is done using the proposed model. It is found by the simulation results that the...
Effect of source/drain contact resistance on the DC characteristics of large area Graphene Field Effect Transistor (GFET) is reported here. As graphene has been identified as a potential candidate for replacing silicon based devices, their performance has been thoroughly investigated. In practical devices, the contact resistance at the interface of channel and Source/Drain (S/D) contact is inevitable;...
Quasi-static capacitance voltage (CV) characteristics of In1–xGaxSb-on-insulator field-effect transistor (FET) are investigated using 1-D coupled Schrödinger-Poisson equations. Here, we report for the first time the staircase trend in the CV characteristics of such ultrathin-body FET. This observation is well correlated with the gate-bias-dependent electron concentration in different subbands. It...
The quasi-static capacitance-voltage (CV) characteristics of buried channel n-InGaSb MOSFET is investigated using SILVACO's ATLAS device simulation package. Self-consistent method is applied to solve the coupled one dimensional Schrödinger-Poisson equation taking into account of wave function penetration and strain effect. It is found that the CV profiles and threshold voltage are strongly depended...
This paper details the design and analysis of a novel MEMS fully differential capacitive sensor which can be used to measure the parameter related to force changes, such as pressure or acceleration. This MEMS model uses a new structure to get extremely high resolution of 11.6fF/KPa. Further it has a good level of linearity as regard changes in capacitance as a function of force change.
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