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This paper reports on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MOSFETs per switch position and uses synchronous conduction to achieve high average and peak efficiencies over its entire operating region to meet the demands...
Silicon Carbide (SiC) wide band gap power devices are capable of operating at extremely high current densities and switching frequencies. Systems embracing these benefits can achieve a substantial increase in power density. However, cooling becomes exponentially more difficult as the size of the modules lessens. Direct cooling of the power electronic modules, in which the liquid coolant flows over...
A SiC-MOSFET composite boost converter for an electric vehicle power train application exhibits a volumetric power density of 22 kW/L and gravimetric power density of 20 kW/kg. The composite converter architecture, which is composed of partial-power boost, buck, and dual active bridge modules, leads to a 60% reduction in CAFE average losses, to a 280% improvement in power density, and to a 76% reduction...
APEI has developed high-performance electronics to exploit the unique capabilities of wide-bandgap devices. Crucial enabling features include high current density, fast switching speed, high-voltage (>10 kV) blocking, high-temperature operation (>200°C), and inherent radiation tolerance, features which have the potential to completely revolutionize existing electronics, from milliwatt to megawatt...
APEI, Inc. manufactures high performance, high temperature wide bandgap discrete packages, multi-chip power modules (MCPMs), and integrated systems for extreme environment applications. In this paper, APEI, Inc. presents two MCPMs, the HT-2000 and X-5, and two discrete packages, the X-6, and XHV-2, which were designed using advanced packaging materials and processes enabling high temperature operation...
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