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This work demonstrates a multi-Mode CT ΔΣ ADC in 14nm FinFET Intel Technology. The proposed converter makes use of a novel 5-bit partial DEM technique at 1.25GHz that, in conjunction with an offset current dumping solution, drastically reduces current and area. The ADC reaches a measured DR of 73/71 dB while consuming 8/12 mW for the 9/50 MHz BW modes, respectively.
Electron- and hole-mobility enhancements in biaxially strained metal–oxide–semiconductor transistors are still a matter for active investigation, and this brief presents a critical examination of a recently proposed interpretation of the experimental data, according to which the strain significantly modifies not only the root-mean-square value but also the correlation length of the surface-roughness...
This paper presents a systematic comparison between the numerical efficiency of the pseudo-spectral (PS) and finite difference (FD) methods for the solution of eigenvalue problems related to both n and p-MOS transistors, with different geometries and carrier dimensionalities. Our results indicate remarkable advantages of the PS compared to the FD method in terms of CPU time.
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