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Write-erase cycling of flash memories has distinct failure signatures that have been thoroughly documented in the literature. A new mechanism has been uncovered when cycling at low temperatures. On the 65nm embedded flash technology, units exhibited a programming failure signature. However, further investigation verified that fail bits were fully programmed. Cause of failure was attributed to a non-classical...
We present a simulation methodology to analyze single bit fails in SRAMs with no visual defect to account for the failure. Our approach generates the MOS IV curves for all six transistors of the failing bit cell and uses this data to simulate read, write and read-disturb failures. A good agreement with the tester data then establishes the basis for the failure even in the absence of any visual defect(s)
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