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We present an efficient method to include full-band-structure effects for the case of a silicon conduction band in a deterministic Boltzmann equation solver based on the high-order spherical harmonics expansion method. This method employs the exact density of states and the group velocity obtained from band structure calculations, and it eliminates the modulus of the wave vector in the formulation...
A SiGe HBT is simulated using a deterministic Boltzmann equation solver with full band effects. An anisotropic band structure fitted to full band for high energies significantly improves the simulation of SiGe HBTs with a spherical harmonics expansion solver, especially when it comes to breakdown voltages. This makes it a more efficient alternative to stochastic Monte Carlo simulation.
In this paper, a deterministic approach to electron transport based on the spherical harmonics expansion of the Boltzmann equation is presented for SiGe heterojunction bipolar transistors. In order to take into account the position-dependent minima of the valleys of the conduction band, a new formulation of the discretized scattering integral for non-aligned and non-equidistant energy grids is developed...
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