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This paper compares the harmonic distortion of n- and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n- and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the...
This paper presents an analysis on the linearity of Asymmetric Self-Cascode (A-SC) of FD SOI nMOSGET transistors at cryogenic temperatures. This is achieved by evaluating experimental results of associations of transistors with various combinations of channel doping, obtained at temperatures ranging between liquid helium temperature (LHT, 4K) and room temperature (300K). It has been observed that...
This paper presents an experimental analysis of the harmonic distortion of asymmetric self-cascode (A-SC) association of SOI transistors. This goal is achieved by comparing the A-SC to the symmetric self-cascode (S-SC) configuration with different channel lengths. The non-linearity data have been obtained by applying the Integral Function Method to experimental measurements, for the evaluation of...
The linearity of Junctionless nanowire transistors operating in the linear regime has been evaluated through experimental data and numerical simulations. The influences of the fin width, the gate bias, the temperature and the series resistance on the overall linearity have been evaluated. It is demonstrated that the increase of the series resistance improves the second order distortion and degrades...
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