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A thickness controlled dual junction GaAs//Si solar cell for current matching was fabricated and demonstrated. The optically thin GaAs top cell grown by metal-organic vapor phase epitaxy (MOVPE) was directly integrated on the Si bottom cell by surface-activated bonding (SAB) method. Owing to the optically thin (∼300 nm) GaAs top sub-cell, the operation of current-matched dual junction cell was observed...
Some of the most advanced laptop computers have their trackpads made to detect both force and position precisely. These trackpads are made of intricately designed force sensors, taptic engines and capacitive glass surfaces. In this study, we have modified simple Nylon® fabric which senses both force and position. A commercially available Nylon® fabric was coated with reduced graphene (rGO) in a layer...
Room-temperature surface-activated wafer bonding between bare III-V semiconductor surfaces has become a key technology for high-efficiency multi-junction solar cells, where the reduction of interfacial electrical resistance is of crucial importance for achieving highest efficiency. In the bonding process, surface cleaning using fast atom beam (FAB) of noble gas elements is vital for successful bonding...
Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I–V) measurements and transmission electron microscopy (TEM) observations. Ne,Ar,Kr and Xe gases were employed for FAB source. We confirm that it is possible to reduce the interfacial damage and improve the conductivity of GaAs/GaAs bonded interface by changing...
Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I–V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of the bonded interface has achieved about 0.16 Ωcm2 at 0.1 V.
In this research, Ge/GaAs wafers were successfully bonded at room temperature by means of surface activated bonding (SAB) using fast atom beam (FAB) in high vacuum condition. Scanning acoustic microscope (SAM) observation shows wafers were bonded over almost the entire area. After 250°C annealing in N2 atomosphere, interfacial voids were reduced. Bonding strength of the interface archived 4.87MPa...
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