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A novel balanced reflect-type vector modulator topology is presented. The use of only four 90° hybrid couplers allows a much-reduced area, competitive with active solutions, while keeping all benefits of the passive topology. A test circuit was developed using a 0.25 μm SiGe BiCMOS technology. The K-band vector modulator occupies 353 × 435 μm and measurements showed a very well centered and uniformly...
This paper presents a 20.35 GHz low power, high gain, low-noise amplifier (LNA) with a 30 GHz band-stop filter embedded in the matching network. Designed in a 0.25 μm SiGe:C BiCMOS technology, it meets the specifications imposed by a full-duplex K/Ka-band shared aperture active phased-array antennas for satellite communications. The LNA exhibits a measured gain of 32.8 dB at 20.35 GHz and a 3 dB bandwidth...
The design and performance of two compact monolithic spiral quadrature couplers are presented, employing a novel configuration of mutually coupled coils. The first, designed at 20.35 GHz, occupies 131 × 142 μm and achieves 0.5 dB fractional bandwidth of 19%, with phase error and intrinsic loss below 2.6° and 0.92 dB, respectively. The second, designed at 30.15 GHz with 5.24 dB coupling coefficient,...
Vector modulators are a key component in phased array antennas and communications systems. The paper describes a novel design methodology for a bi-directional, reflection-type balanced vector modulator using metal-oxide-semiconductor field-effect (MOS) transistors as active loads, which provides an improved constellation quality. The fabricated IC occupies 787 × 1325 μm2 and exhibits a minimum transmission...
A highly complex mm-wave system-on-chip (SOC) for Ka-band active antenna arrays is presented, containing digital and mixed-signal circuits, RF-MEMS switches and four transceivers. In RX mode, 13.7dB of maximum gain with −21dBm IP1dB were obtained, in TX mode, 11dB of maximum gain with −2dBm OP1dB. A total of 65536 amplitude and phase states can be set. The IC has a total power consumption of 222mW...
The design and characterization of a robust pulse generator power-on reset circuit, with accurate bandgap based thresholds, brown-out event detection capability and hysteresis, realized in 0.25 µm SiGe BiCMOS technology is presented. The resulting circuit consumes 7.5 µA and occupies 360×440nm2 area. Measured reset pulses longer than 340 µs are generated. The design was simulated with a voltage and...
A highly integrated phased array transmit/receive architecture is presented. Multilayer microstrip antennas with a scanning potential up to 60° are combined, on a common manifold, with SiGe MMICs including four RF channels each, together with the necessary digital control circuits. Power distribution and combining are realised by the concept of a folded planar reflectarray. This study also includes...
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