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Ionizing radiation degrades the electrical characteristics of MOS devices, reducing their reliability, performance, and lifetime; therefore, hardening techniques are required for the proper functioning of those devices when exposed to harsh environments. Nonetheless, in the context of design flow automation, necessary to synthesize complex digital circuits, there is a lack of reliable foundry-provided...
In this work, the Radiation Hardened by Design (RHBD) of an inverter cell is proposed. The design considers the use of standard CMOS processes with commercial PDK, focusing on fully incorporating the design into CAD tools allowing the automatic place & route. Corners and Monte Carlo simulations were performed in order to analyze and compare the performances between the standard cells and proposed...
This work aims to study different analytical and numerical models to estimate effective W/L ratio considering transistors with enclosed gate geometry, suitable for implementation into standard Process Design Kits (PDK). Different geometries emphasizing the output (ID × VDS) and the transfer (ID × VGS) characteristics were studied. Besides estimating the aspect ratio, the source and the drain areas...
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