The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A particular asymmetric superlattice (SL) with a structural defect was designed to operate as a quantum well infrared photodetector with detection energies in the mid-infrared range. The asymmetric quantum well infrared photodetector is based on InGaAs/InAlAs quantum wells lattice matched to the InP substrate. Due to the device asymmetry, it can operates in the photovoltaic mode (zero applied bias),...
InGaAs/InAlAs quantum well (QW) infrared photodetector structures have been investigated to reach operation energies larger than the heterostructure bandoffset. The structures are composed of superlattices having a central QW with a thickness different from the others, behaving as a defect within the periodic structure. The central QW gives rise to localized states in the continuum, allowing absorption...
By carefully designing diagonal transitions in the active region, we present a broadband mid-infrared quantum cascade detector with photocurrent ranging from 3.9 to 9.6 μm, more than 2 times broader than stacked designs.
InGaAs/InAlAs superlattice structures with a wider central quantum well have been developed for quantum well infrared photodetectors (QWIPs) for operation between 1.7 and 3.1 microns, a range normally unreachable with conventional intraband transitions in this type of material. With this approach the limitation of having bound states only with energies below the barrier no longer holds, therefore...
By carefully designing a multi-quantum well infrared photodetector (QWIP) heterostructure, we present an asymmetric QWIP with a localized state in the continuum. A narrow photocurrent spectrum confirms the electron confinement above the barrier.
We present a quantum well infrared photodetector (QWIP) based on the control of a “defect” in a superlattice. The InGaAs/InAlAs superlattice is lattice matched to an InP substrate and is composed of 11 quantum wells. The central quantum well has a different thickness from its neighbors introducing a defect in the structure. The defect energy level is controlled in a way to enhance both the oscillator...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.