The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper take a typical 220kV three-phase three-limb oil-immersed transformer as an example, 3D coupled electromagnetic-fluid-thermal model was built. Using field-circuit coupled finite element method(FEM) to calculated the magnetic flux distribution of core and the current of windings under DC bias. Take the electric power losses of core and windings as heat source, the temperature distribution...
A multi-threshold design methodology of stacked silicon nanowire MOSFETs is proposed. A flexible doping scheme is demonstrated for high-performance and low-operating power designs integrated together on a same substrate. With additional channel length adjustment, low standby power is further achieved.
This work benchmarks the performance of GAA MOSFETs against that of optimized SOI FinFETs at 10 nm gate length. The yield of 6-T SRAM cells implemented with these advanced MOSFET structures is then investigated. GAA MOSFET technology is projected to provide for 0.1 V lower minimum cell operating voltage with reduced cell area.
Genome-wide association study (GWAS) has become an effective and successful method to identify disease loci by considering SNPs independently. However, it may be invalid for uncovering the disease loci that not reaching a stringent genome-wide significance threshold. As a result, multi-SNP GWAS is developing rapidly as a complement to traditional GWAS. However, the high computational cost becomes...
In this work, based on the ACF model and the SVM classifier, succeeded on trials mining information that it's more effective to analyze the subcellular localization prediction of apoptosis proteins when adopting hydrophobicity property. This information is obtained in three benchmark datasets by using the ACF model and SVM to scan the AAindex database, which contains 544 kinds of amino acids. The...
6T-SRAM cell design with gate-all-around (GAA) silicon nanowire (NW) MOSFETs is investigated via three-dimensional TCAD simulations and compact analytical modeling. A rectangular NW channel design allows the transistor width to be adjusted with reduced impact on short-channel effects. This in turn provides a means for tuning the cell ratios to optimize the tradeoff between static noise margin and...
This paper measures the contribution of information productivity to the economic growth by a revised Cobb-Douglas production function which takes capital, labor and information as three elements. The result shows that information productivity contributes the most to the economic growth. Meanwhile, we also compare China with other high income countries and find that information input has stronger multiplier...
In recent years, the gene expression profiles are used for cancer recognition. But the researchers are disturbed by their large variables and small observes. In this paper, a novel feature selection method based on correlation-based feature selection(CFS) was proposed. Firstly, the measures of variable to variable and variable to observe were calculated respectively. Then we utilized heuristic search...
A new “all-single-wire” 6T-SRAM technique using junctionless nanowire FETs is proposed. The quantization-free design shows a great advantage in Si-nanowire-based SRAM cells. TCAD-simulated results show that the proposed single-wire SRAM can improve Read stability, and it can save about one third of the area as compared with multi-wire design while it is compatible with conventional processing.
This paper investigated how and why abnormal stock returns associate with the announcement of equity issues by Chinese firms. We estimated abnormal return by OLS, using the market model. Then we chose some variables and established an econometric model to verify some hypothesis introduced in previous study. The empirical results indicate that there exist negative abnormal return on China stock market...
An optimal device design methodology for bulk FinFETs is proposed. A feasible yet simple process technique is shown to achieve good performance while maintaining low leakage current with thin isolation oxide and doped substrate.
Design issues and insights of multilevel phase change memory are presented. Based on a proposed compact model calibrated to measured data, we assess the impact of resistance drift on multilevel cell design. It is found that special care has to be taken to develop a viable multilevel design as the design window could be degraded and worsened at high temperature.
Design optimization to improve write speed of phase change memory is shown achievable by using a physical yet analytical compact PCM model. Our simulation results suggested that the write speed of continuous pulse programming scheme can be optimized and is superior to slow quenching scheme for multi-level cell application.
Optimal design for nanowire FETs beyond 22 nm technology node is presented using numerical 3D simulation and physical analysis. Our results suggest that design optimization associated with the wire diameter could achieve performance benefits in the nanowire FET technologies. Small wire diameter is not necessary for performance, though it favors device scaling.
In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.
In this paper, a new stype of aerostatic bearing is presented. The new structure can increase the stiffness of aerostatic bearing by using variable-section pressure equalizing groove of elastic membrane. Then, the aerostatic journal bearing with variable-section pressure equalizing groove of elastic membrane was proposed. According to the knowledge of computational fluid dynamics and the Shell theory,...
In this paper, we present novel phase change memory programming techniques achieving low power operation without compromising performance by using proper pulsing schemes. By applying continuous current pulses at a fixed frequency or with the same pulse magnitude, binary data are successfully written into memory cells. The proposed programming techniques can be implemented with more flexible or simplified...
In this paper, comprehensive comparisons of nanowire and multi-gate nMOSFETs in scaling capability using three-dimensional numerical simulations are presented. Their short channel effects and device performances are also investigated. The nanowire device requires less device dimension constraint on body diameter due to perfect surrounding gate-to-gate capacitive coupling and hence it is promising...
A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first...
This paper presents a simple yet predictive compact model for phase change memory (PCM). We successfully implement the model in a circuit simulator using Verilog-A. Due to the physical nature of the model, it can be used to predict the temperature and crystalline fraction in the cell, simply via SPICE simulation. This paper also demonstrates the use of the model in static resistance calculation, i...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.