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We present a theoretical study of the ballistic performance of gate-all-around field-effect transistors (FETs) with channels consisting of armchair-edge graphene nanoribbons (aGNRs) of various widths and silicon nanowires (SiNWs) with square cross sections. We apply an atomistic quantum transport formalism based on empirical pseudopotentials. Our results show that the turn-OFF behavior of aGNRFETs...
We model a field-effect transistor making use of the spin-polarized edge states of two-dimensional topological insulators. To account for scattering while respecting Pauli's exclusion principle and the ballistic limit, we employ the Boltzmann equation. We account for phonon-assisted scattering processes and show that the current can be modulated over several orders of magnitude as a function of gate...
An open boundary-conditions full-band quantum transport formalism with a plane-wave basis based on empirical pseudopotentials is used to self-consistently simulate transistors in the sub-1 nm technology node, with one-dimensional silicon nanowires, armchair-edge graphene nanoribbons, and zigzag-edge carbon nanotubes as the channel. The electrostatic potential energy and charge density distribution...
The electronic and transport properties of sp3-hybridized armchair and zigzag edge silicane nanoribbons have been investigated using nonlocal empirical pseudopotentials and ab-initio calculations. Compared to the armchair graphene nanoribbons, silicane ribbons do no suffer from the chirality dependence of the band gap. Calculated low-field electron mobility and ballistic conductance show a strong...
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