The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents the derivation, implementation and validation of a new model for Surface Roughness Scattering (SRS) in multi-gate FETs (MuGFETs) and gate-all-around nanowires (GAA-NW) FETs. The model employs a non linear relation between SRS matrix elements and interface fluctuations, that in planar MOSFETs allowed us to reconcile mobility simulations with experimental values for the r.m.s. interface...
We report mobility simulations for long channel Si and InGaAs MOSFETs as a function of the semiconductor film thickness and inversion charge. Calculations account for numerous relevant scattering mechanisms and surface roughness is described by the recently developed non-linear model [1]. Reasonable agreement with available experiments is obtained employing the measured surface roughness r.m.s. value...
In this paper, we have developed a full Quantum Device Simulator by solving the Wigner equation in the mode space for a cylindrical nanowire MOSFET. A novel and efficient numerical technique to solve the Wigner equation has been developed. It's comparison with the LU decomposition method shows that significant improvement in the simulation time is obtained. Comparison of the results obtained from...
This paper investigates the application of gate-all-around (GAA) vertical nanowire transistors (VNWFET) as an access element in future non-volatile memories (NVM) such as resistive random-access memory (RRAM), phase-change random access memory (PCRAM) and spin-torque-transfer memory (STT-RAM or MRAM). We primarily choose direct-current (DC) parameters ION and ION/IOFF as our figure of merit (FOM)...
Multiple gate MOSFETs (MuGFET) have gained significant attention as the scaling of the conventional MOSFET comes to an end. Of the possible architectures, the gate-all-around nanowire (NW) transistor offers the best gate control over the channel. In order to model GAA nanowire devices for channel lengths less than 10nm, while preserving a connection to the drift-diffusion framework familiar to device...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.