The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The objective of this study is to optimize the Cu/Sn solid liquid bonding process, which is an attractive technique for wafer-level MEMS packaging and encapsulation. In order to optimize the bonding process, the effect of bonding temperature profile, initial Sn layer thickness and bond pressure are investigated and discussed. Bond performance is characterized by sealing yield, dicing yield and cross...
Solid-Liquid Interdiffusion (SLID) bonding has emerged as a promising bonding technique, particularly for high-temperature applications. It uses well-establish processing steps such as electroplating, and it is well suited for wafer-level processing. SLID is based on intermetallic compounds (IMCs) as the bonding medium, enabling a thermal stability at temperatures well above the bonding temperature...
The objective of this study is to optimize the Cu/Sn solid–liquid interdiffusion process for wafer-level bonding applications. To optimize the temperature profile of the bonding process, the formation of intermetallic compounds (IMCs) which takes place during the bonding process needs to be well understood and characterized. In this study, a simulation model for the development of IMCs and the unreacted...
The aim of this study is to optimize the bond process for Cu/Sn wafer-level bonding, a competitive material for modern MEMS encapsulation due to its low cost and high performance. For this Solid-Liquid Interdiffusion (SLID) bonding technique, it is important to understand the formation of the intermetallic compounds (IMCs), which takes place during the bond process. In order to estimate thermodynamic...
In this paper, we present recent results on mechanical strength and reliability of Cu/Sn bond frames with reduced foot-print, for wafer-level packaging of Micro and Nano-devices. The structures of the test vehicle and intermediate multi-layer of bond frames were designed and fabricated on cap and substrate wafers. Electroplated Cu/Sn frames were bonded at temperature 270 °C in an EVG501 wafer bonder...
To avoid contamination and ensure stable and reliable performance for MEMS (micro electro mechanical systems) devices, they may require to be operated in a vacuum environment. Wafer level hermetic bonding is one of the main requirements for successful micro-packaging in a vacuum environment. However, most of the devices are required to guarantee that the atmosphere inside the cavity remains stable...
Low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) have been used for depositing silicon nitride (SiN) as passivation layer in microfabrications. SiN deposited by LPCVD and optimized PECVD can perfectly mask Si from etching attack in TMAH-water solution. After Al metallization, pinholes are always formed on SiN because of the Al crystal hillocks. Due...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.