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We fabricated nanoscale-gate Al0.25In0.75Sb/InSb high electron mobility transistors (HEMTs) grown on a (100) GaAs structure by molecular beam epitaxy (MBE) and measured their DC and RF performances at room temperature. The epitaxial structure had an electron mobility (μ) of 17,700 cm2/Vs with a sheet carrier concentration (Ns) of 1.06×1012 cm−2. We also introduced an evaporated SiOx passivation film...
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain-side recess lengths Lrd's at 300 and 16 K. The kink phenomenon was seen in the current-voltage (I–V) characteristics for all the measured HEMTs at 16 K. The peak cutoff frequency ƒT decreases with increasing Lrd both at 300 and 16 K. On the other hand, the maximum oscillation frequency...
We carried out Monte Carlo (MC) simulation of In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a “realistic” buried gate in which the tip of gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field...
We carried out Monte Carlo (MC) simulation of InAlAs/InGaAs high electron mobility transistors (HEMTs) with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance gm_max and gate capacitance Cg increase with increasing the buried depth d. The extent of increase in the gm_max is more than that in Cg. As a result, the cutoff frequency fT increases with increase...
The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic fT from the lower Vds because of the higher electron velocity. Owing to the shorter limit in the Lg scaling at the lower Vds, the device C also exhibits the higher frequency...
We calculated the unstrained and the strained band structures of InAs and carried out Monte Carlo simulation of InGaAs/strained-InAs/InGaAs composite channel high electron mobility transistors (HEMTs) considering 2-dimensional electron gas (2DEG) self-consistent analysis by solving Schrödinger and Poisson equations. With considering the effect of 2DEG, the drain-source current Ids decreases. However,...
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