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Wafer Level Package (WLP) demand has been increasing in proportion to cost competitive device's demand year by year. In order to manufacture the WLP which has higher reliability efficiently, assembly processes with Bump Support Film (BSF) and Backside coating tape has been developed. The BSF consists of Back Grinding tape (BG tape) for getting a function as a wafer thinning and Bump Support Layer...
A single electron transistor (SET) with floating gate, which has a non-volatile memory effect, is successfully integrated with a charge pump circuit that consists of conventional MOS circuits on the same chip. By applying high voltage generated by the charge pump circuit to SET with floating gate, characteristics control of the Coulomb blockade oscillation is demonstrated at room temperature for the...
Dot formation mechanisms of single-electron transistors (SETs) and single-hole transistors (SHTs) are reinvestigated. “Shared channel” SET/SHTs in form of nanowire (NW) channel FETs are fabricated and characterized. It is suggested that, in addition to quantum confinement effect (QCE), the positive charges create parasitic dots in SHT channels resulting in multiple-dot SHTs. It is concluded that a...
A single electron transistor (SET) with floating gate, which has a non-volatile memory effect, is successfully integrated with MOS circuits. By applying high voltage generated by the charge pump circuit to the floating gate SET, the characteristics control of Coulomb blockade oscillation is demonstrated for the first time at room temperature. This attempt will open a new path of adding new functionality...
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