A single electron transistor (SET) with floating gate, which has a non-volatile memory effect, is successfully integrated with a charge pump circuit that consists of conventional MOS circuits on the same chip. By applying high voltage generated by the charge pump circuit to SET with floating gate, characteristics control of the Coulomb blockade oscillation is demonstrated at room temperature for the first time. This attempt will open a new path of adding new functionality to conventional MOS circuits by integration with so-called “Beyond CMOS” devices.