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In this paper, we report for the first time, assessment on mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless (JL) nMOSFETs with cross-section down to 5 nm. This analysis was performed in accumulation regime, as a first step, addressing bias-dependency of various key MOSFET parameters (e.g. series resistance, channel width and gate-channel capacitance), non-uniform...
In this work we report dense arrays of highly doped gate-all-around Si nanowire accumulation-mode nMOS-FETs with sub-5 nm cross-sections. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ≥ 2.5 GPa uniaxial tensile stress is reported for the first time. The deeply scaled Si nanowire shows low-field electron mobility of 332 cm2/V.s at room temperature,...
In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ∼400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.
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