The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
III–V compound semiconductor quantum dot (QD) optical devices, such as high-power lasers and high-speed modulators, have great potential for the future of telecommunications and quantum cryptographic communication. We developed a top-down method for fabricating InGaAs quantum nanodisks (NDs) arrays by using bio-template and neutral beam etching (NBE) processes. Damage-free InGaAs/GaAs nano-pillar...
We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the quantum efficiency in the MQW region by a factor of 4 through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 9% efficiency...
InGaAs/GaAsP quantum wells (QWs) have been inserted into a GaAs p-i-n cell aiming at a better current matching of an InGaP/GaAs/Ge tandem solar cell: photon absorption at a longer wavelength range than the GaAs bandedge was attempted while keeping pseudo-lattice-matching to GaAs for the QW structure as a whole. The efficient extraction of photo-generated carriers from the InGaAs wells to an external...
We have developed the calculation technique using wafer's curvature and X-ray diffraction (XRD) pattern to analyze the structure of InGaAs/GaAsP multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE). Instead of using difficult and time consuming XRD reciprocal space mapping (RSM), the curvature can effectively supplement the uncertain information of MQWs obtained from XRD...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.