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We present here a new technique which for allows the accurate characterization of the channel doping profile using secondary ion mass spectrometry (SIMS) analysis within the active area cells of a trench MOSFET. The technique involves the chemical removal of the entire structure apart from the silicon mesas and trenches, followed by the deposition of undoped silicon (polycrystalline or epitaxial)...
Reliability measurements have been carried out on n-channel delta-doped MOSFETs incorporating an anodic gate oxide. The threshold voltage shifts induced in these devices when stressed for up to 105 seconds is compared with that observed for control devices fabricated on plain wafers. The delta-doped devices show a reduced threshold voltage shift indicating a reduction in oxide damage for these devices...
The fabrication of a set of delta-doped MOSFETs with a range of gate areas down to 0.8??mx0.8??m is reported. Current-voltage curves have been measured and compared with results predicted by the HFIELDS device model. A transition in the I-V characteristic is identified and attributed to the formation of a parasitic channel immediately below the gate oxide. Good control of the threshold voltage is...
The resolution of the capacitance-voltage profiling technique is known to be limited by the Debye length for classical structures. When very narrow layers exist in the sample quantum effects become important and the spatial extent of the electron (or hole) wave function can become a limiting factor. In this paper the interpretation of C-V profiles of structures containing delta-doped layers is discussed,...
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