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This article describes a GaAs PIN photodiode was directly grown on a Si substrate in which CMOS-based transimpedance amplifier (TIA) was fabricated using general Si CMOS process. This monolithic integration device was successfully demonstrated.
We propose a scalable CMOS fabrication process for high mobility InGaAs/Ge dual channels using a common TaN metal source/drain and gate (Metal-SD&G) under consideration of material band lineup. By combining common TaN Metal-SD with compatible TaN/Al2O3 gate stacks, we have successfully demonstrated operation of both InGaAs nMOS and Ge pMOS devices fabricated at the same time. Excellent InGaAs/Ge...
A fused pH and fluorescence sensor is proposed, and a prototype has been fabricated using CMOS silicon integrated circuit technology. Fluorescence intensity and pH can be detected at the same pixel for the first time. In the proposed device, a pH sensor which uses CCD image sensor technology and a filter-less fluorescence detection sensor are fused in the same pixel, enabling fluorescence and pH signals...
The paper describes integrated CMOS-MEMS technology and its applications. We discuss the features of integrated complementary metal-oxide-semi-conductor-microelectromechanical systems (CMOS- MEMS). The prospect of this integration is also presented. A MEMS fingerprint sensor and a low-voltage radio frequency (RF) CMOS-MEMS switch are the case studies discussed. In conclusion, it is confirmed that...
This paper describes an integrated MEMS LC resonator that consists of a MEMS inductor and varactor. The resonator features a sealed air-suspended structure: the inductor and varactor are suspended above a CMOS LSI to improve their performance, and they are sealed with a film to protect them during packaging. The quality factor of the inductor is four times higher than that of a CMOS top-layer-metal...
This paper describes a novel RF CMOS-MEMS switch that integrates RF MEMS switches and CMOS control circuits. A single-pole 8-through RF CMOS-MEMS switch was fabricated and its operation at 3.3 V supply voltage was achieved. The switch was encapsulated with a thin film at wafer level to prevent destruction during packaging. Experimental results confirm that the switch has mechanical reliability for...
A 1.0V 10b 100MS/s pipeline ADC consuming 40mW fabricated in a 90nm CMOS process is described. Design consideration for the thermal noise of operational amplifiers effectively saves the power consumption of the ADC with conventional architecture at 1.0 V supply. Measured peak SNDR of the ADC is 56.5dB. It occupies 0.52 mm2 with on-chip decoupling capacitors and 0.31 mm2 without the capacitors, both...
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