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Unlike MOSFETs, tunnel-FETs (TFETs) are not limited by a 60 mV/dec subthreshold swing and therefore scaling the supply voltage beyond the MOSFET's 1 V plateau becomes feasible. Supply voltage scaling is a necessary condition for reducing the power consumption per transistor, which enables further size scaling of the FETs. Designing a successful FET is however challenging, because it is not sufficient...
Tunnel-FETs are potential successors of MOSFETs because of the absence of short-channel effects and of a subthreshold-slope limit. As a solution to the low on-currents reported for silicon-based tunnel devices, we have simulated both gate configuration modifications as well as source material modifications. These modifications are ideally suited for implementations in vertical nanowire-based transistor...
The tunnel field-effect transistor (TFET) is a promising candidate for the succession of the MOSFET at nanometer dimensions. Due to the absence of a simple analytical model for the TFET, the working principle is generally not well understood. In this paper a new TFET structure is introduced and using Kanepsilas model, an analytical expression for the current through the TFET is derived. Furthermore,...
As a solution to the low on-current of silicon-based tunnel-FETs (TFETs), the source material of the n-channel TFET is replaced with the small-bandgap material germanium, which results in a current boost up to the same level as the current of MOSFETs. However, no solution has been reported to boost the on-current of the all-silicon p-TFET, a necessity for making an inverter and competing with the...
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