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Elevated temperatures can significantly affect the driving forces of high-k degradation and breakdown. Okada et al. have proposed the generated subordinate carrier injection (GSCI) model. This model claims the universality of stress-induced leakage current (SILC) vs. hole fluence, independent of the temperature in n-channel MOSFET's with Hf and Al-based gate dielectrics. In this paper, we demonstrate...
In this work we examine the effect of nitrogen incorporation on the defect generation behavior in HfSiON gate dielectric layers. We show that nitrogen effectively passivates pre-existing defects in the HfSiO, but the effect is quickly reversed during stress leading to high levels of SILC and NBTI.
In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: (1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two...
In this work we present a novel trap spectroscopy based on stress induced leakage current measurements for constant voltage stress and substrate hot carrier injection stresses in nMOSFET devices. Peaks in the stress induced leakage current at several gate voltages are attributed specifically to defects in the bulk and at the interface by using the substrate hot electron injection technique to specifically...
Recently, thin rare-earth oxide dielectric capping layers between the high-k and metal gate have been used to modulate the threshold voltage (Vt) of MOSFETs [Kirsch et al., 2006]. In Dy2O3-capped high-k based devices, we observe an anomalous PBTI behavior where the Vt decreases during stress. Results suggest that there are two competing mechanisms - diffusion of preexisting positively-charged species...
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