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A 2.4/5GHz Fully-Integrated Transceiver is implemented in 65nm CMOS technology. To alleviate the cost of external front-end components, the G-mode RF transmit/receive (T/R) switch and a power-efficient linear CMOS PA are fully integrated on-chip. On the other hand, for better performance, only the A-mode PA is integrated on-chip while the external T/R switch is used. It shows 5dB and 5.5dB NF in the...
A 2.4 GHz linear CMOS power amplifier (PA) for OFDM WLAN application in 65 nm CMOS technology is presented. The cascode PA operating from 3.3 V employs the proposed asymmetric lightly doped drain MOSFET (A-LDD) structure as common-gate stage to sustain large signal stress and 1.2 V core device as common source stage to provide high frequency operation. Beside, dynamic bias technique is used not only...
A 2.4 GHz fully-integrated MISO transceiver consisting of two receivers and one transmitter is implemented in 0.18 mum CMOS technology. To alleviate the cost of external front-end components, the RF transmit/receive (T/R) switch and a power-efficient linear CMOS PA are fully integrated on-chip. It shows 3.5 dB low noise figures in the receivers respectively. Also, the transmitter delivers an average...
A fully integrated transmitter front end with on-chip power amplifier (PA) in 0.18 um CMOS technology is presented. The on-chip PA employs dynamic bias technique to reduce power consumption and enhance linearity. In the measurement, it reveals the output PldB of the PA is 26.5 dBm. Also, the transmitter delivers an average power of 17.3 dBm with EVM of -28.1 while drawing 225 mA of DC current (PA...
A fully-integrated direct-sequence spread-spectrum (DSSS) CMOS transceiver for 2.4-GHz ISM band is presented. It integrates a RF transceiver, a frequency synthesizer, baseband filters, digital signal processing, an adaptive differential pulse-code modulation (ADPCM) codec, and a programmable PA pre-driver. The transceiver chip achieves a measured sensitivity of -103 dBm and an output power of 3 dBm...
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