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Detailed physical understanding of the noise mechanisms that exist in bulk MOS transistors is developed. These sources of noise consist of the intrinsic fluctuations which are inherent in the device structure and extrinsic fluctuations that are subject to optimization and elimination. While most noise sources are well understood, excess channel noise and 1/f noise continue to be areas of active research.
Juxtaposed iso-drawn and iso-fabricated devices now exhibit noticeably different characteristics due to underlying intrinsic and extrinsic fluctuations. To overcome extrinsic fluctuations manifested by top-down device fabrication challenges, the bottom-up approach akin to growth in living organisms holds promise. However, in either approach, the intrinsic fluctuations due to the finite size of the...
RF noise performance of PD-SOI MOSFETs at 40 nm gate length is reported. Using drift-diffusion transport, a good match between small signal measurements and simulations is obtained in presence of velocity saturation and impact ionization. Similar to bulk, PD-SOI also exhibits excess RF channel noise. A sharp rise in the channel noise parameter γ near the kink region in the DC I–V can be explained...
A physical understanding of both intrinsic and extrinsic noise mechanisms in an IGFET is developed. Intrinsic noise mechanisms fundamental to device operation include channel thermal noise, induced gate noise and induced substrate noise. While the effect of channel thermal noise is observable at zero drain-to-source voltage, the induced gate and substrate noise do not manifest themselves under these...
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