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This work presents the recent progress in the development of a simulation system, CoolSPICE, specifically targeting high-power and high-temperature simulations of SiC power MOSFET devices in particular. CoolSPICE uses a subcircuit based on the conventional BSIM MOSFET model to represent SiC power MOSFETs. The BSIM equation set is modified and new parameters are added to the model set to account for...
We report on our development of a Silicon Carbide Power System Computer Aided Design Tool to address the need for improved methodologies for developing next generation high efficiency power electronics using Silicon Carbide power devices. The first major achievement is to develop compact models for SiC power MOSFETs and to input these models into CoolCAD's SPICE-type simulator, CoolSPICE (the student...
We have developed compact and physics-based distributed numerical models for cryogenic bulk MOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured and simulated temperature-dependent current-voltage characteristics of 0.16- and 0.18- bulk MOSFETs. Our measurements indicate that these MOSFETs supply...
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