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We have fabricated 30 nm In0.7Ga0.3As Inverted-Type HEMTs with outstanding logic performance, scalability and high frequency characteristics. The motivation for this work is the demonstration of reduced gate leakage current in the Inverted HEMT structure. The fabricated devices show excellent Lg scalability down to 30 nm. Lg = 30 nm devices have been fabricated with exhibit gm = 1.27 mS/??m, S = 83...
We have experimentally investigated the role of thinning down the channel thickness and using high InAs composition as a channel material, which aims to improve the electrostatic integrity of the device as well as high frequency characteristics of the device. To do so, we have fabricated InAs PHEMTs with tch = 10 nm, together with reference In0.7Ga0.3As PHEMTs with tch = 13 nm. In comparison with...
In this paper, we have experimentally investigated the impact of lateral and vertical scaling of In0.7Ga0.3As high-electron-mobility transistors (HEMTs) onto their logic performance. We have found that reducing the In0.52Al0.48As insulator thickness results in much better electrostatic integrity and improved short-channel behavior down to a gate length of around 60 nm. Our nearly enhancement-mode...
We have experimentally investigated the impact of lateral and vertical scaling of In0.7Ga0.3As HEMTs on their logic performance. Reducing the In0.52Al0.48As insulator thickness results in much better electrostatic integrity and improved short-channel effects down to a gate length of 60 nm. Our nearly enhancement-mode 60 nm HEMTs feature VT = -0.02 V, DIBL = 93 mV/V and S = 88 mV/V. For a given value...
We are investigating InGaAs HEMTs as a future high-speed, low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing (L side) on the logic performance of 50 nm In0.7Ga 0.3As HEMTs. We have found that Lside has a large impact on electrostatic integrity (short channel effects), gate leakage current, gate-drain capacitance,...
We have studied the suitability of nanometer-scale In0.7Ga0.3As HEMTs as a high-speed, low-power logic technology for beyond-CMOS applications. To this end, we have fabricated 50-150 nm gate length In0.7Ga0.3As HEMTs with different gate stack designs. The 50 nm HEMTs exhibit ION/IOFF ratios in excess of 105 and DIBL less than 90 mV/dec. Compared with state-of-the-art Si MOSFETs, the non-optimized...
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