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To improve the latency and bandwidth performance for future high performance computing application, a sub-micron electrical interconnection composed of metal capping layer with sub-micron thickness on typical copper CMP (chemical mechanical polish) BEOL (back-end of line) structure is demonstrated, and the corresponding metal deposition including Ni, Pd, Au using electro-less technique are reported...
CMOS readout circuit is stacked on MEMS accelerometer using face-to-face (F2F) direct metal bonding. F2F bonding provides smaller form factor, latency, and power consumption. The CMOS chip acts as an active cap that encapsulates and provides interconnect routing to the MEMS chip. Metal bonding (Al-Au) was achieved at 300°C/10min/50N. The bond quality meets the requirements during shear and helium...
We demonstrate for the first time 3D multi-tier (N=4) 50μm thin die bonding for 3D IC technology using low bonding temperature and pressure for Cu TSVs bonded on Cu bumps with a cost effective structure. Die-to-die (D2D) thermal compression bonding (TCB) process with scrubbing is carefully studied in order to improve the bump height TTV and surface roughness. The bonding temperature and pressure can...
3D integration has been widely recognized as the next generation of technology for integrated microsystems with small form factor, high bandwidth, low power consumption, and possibility of heterogeneous More-than-Moore integration. Heterogeneous integration of MEMS and CMOS is critical in future development of multi-sensor data fusion in a low-cost chip size system. MEMS/CMOS integration was primarily...
A wafer-level 3D integration structure with Cu TSVs based on Cu/Sn micro-bumps and BCB hybrid bonding is demonstrated. Kelvin structure and daisy chain design are adopted for electrical characterization and reliability evaluation. The results indicate the developed 3D integration scheme has excellent reliability and electrical stability.
A silicon-on-insulator (SOI) micro-electromechanical system (MEMS) accelerometer, complementary Metal oxide semiconductor (CMOS) readout circuit and simultaneous hermetic encapsulation using low temperature Cu-Cu bonding are investigated for 3D heterogeneous integration of MEMS and CMOS. The MEMS accelerometer is fabricated using bulk micromachining technology. A CMOS-based readout circuit is designed...
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