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In this paper, a high-performance polysilicon thin-film transistor (poly-Si TFT) with a trenched body is proposed, fabricated, and studied. This new trenched TFT can be easily produced by filling and etch-back technology without destroying the channel film quality. The addition of the body trench is found to reduce the off-state leakage current by 70% on average, because the trench induces a carrier...
In this paper, the polysilicon thin-film transistor with multi-trenched body is fabricated and investigated that manifests off-state leakage suppression without degrading on-state current and other electric performances. The reason is that the leakage path can be separated by the multi-trenched body and the carrier scattering through the polysilicon grain-boundary traps can also be minimized. Furthermore,...
In this paper, a novel bottom gate polysilicon thin-film transistor (TFT) with smart body tie is presented. Besides, several body-recessed structures are firstly presented and studied. Comparing with the corresponding conventional bottom gate TFT, the local-thinned-body structure device with the smart body tie has many advantages including the lower sub-threshold swing, the higher current turn on/off...
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