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New powerful specific test structures are proposed to characterize the thermal resistance Rth of multi-fingered structures including side and thermal coupling effects. The benefit of such structures over standard ones is clearly demonstrated. Thanks to an original method, the derived Rth model is introduced in an NLDMOS SOI macromodel. The global HV model is able to reproduce the DC characteristics...
Understanding self-heating effect is essential in order to analyze and model the performances of high power transistors. In this paper a new test structure to model thermal coupling on multi-fingered devices is proposed. This structure allows extracting thermal coupling coefficients between different sources. Applied in the case of NLDEMOS devices on SOI technology, a basic model for these coefficients...
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