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We have theoretically investigated the specific contact resistivity of n-type Si and Ge metal-insulator-semiconductor contacts with various insulating oxides. We have found a significant reduction of the contact resistivity for both Si and Ge with an insertion of insulators at low and moderate donor doping levels. However, at the higher doping levels (>1020 cmu−3), the reduction of the contact...
Interface morphology dependent Schottky Barrier Height (SBH) and its modulation by substitutional dopants in NiSi2/Si interface have been investigated using density functional theory. An accurate band gap of Si was estimated by employing meta-GGA exchange correlation functional. We show that the SBH for electrons (in n-type semiconductor) is significantly lower for (001) than (111) orientation of...
The electronic and transport properties of sp3-hybridized armchair and zigzag edge silicane nanoribbons have been investigated using nonlocal empirical pseudopotentials and ab-initio calculations. Compared to the armchair graphene nanoribbons, silicane ribbons do no suffer from the chirality dependence of the band gap. Calculated low-field electron mobility and ballistic conductance show a strong...
The electronic band structure of hydrogen passi-vated, square cross-section, uniaxially strained [001], [110] and [111] silicon nanowires (Si NWs) has been calculated using nonlocal empirical pseudopotentials. Local pseudopotentials for bulk Si - calibrated to yield the correct workfunction and coupled to nonlocal corrections - yield results in good agreement with those of first-principles calculations,...
The electronic band structure of relaxed and biaxially strained Si, Ge, III-V semiconductors (GaAs, GaSb, InAs, InSb, InP) and their alloys (InxGa1-xAs, InxGa1-xSb) on different interface orientations, (001), (110) and (111), is calculated using the nonlocal empirical pseudopotential method (EPM) with spin-orbit interaction using cubic spline interpolations of the atomic form factors. For III-V alloys,...
We discuss selected aspects of the physics of electronic transport in nMOSFETs at the 10-nm scale: Long-range Coulomb interactions, which may degrade performance and even prevent ballistic transport from occurring; scattering with high-k insulator interfacial modes, which depresses the electron mobility but is found to affect minimally the saturated transconductance of 15-nm devices; and the use of...
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