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In order to fabricate a highly reliable InGaZnO-TFT, it is important to form a highly crystalline InGaZnO film with few defects. Evaluation of the crystallinity of InGaZnO is necessary for improving a reliability of InGaZnO-TFT. This paper presents comparison of crystallinities among three kinds of InGaZnO films, which are a CAAC-InGaZnO film having c-axis alignment, a nano-crystalline InGaZnO (nc-InGaZnO)...
In-Ga-Zn-O thin films formed by a sputtering method, in which distinct crystallinity was not observed by selected area electron diffraction (SAED), were analyzed with nano-beam electron diffraction (NBED). As a result, upon analysis on an about 10-nm-thick area of a sample with the use of a beam with an irradiation area of 1 nmφ, we have found that crystals which are not aligned in a certain direction...
It is found by nanobeam electron diffraction that the excimer laser crystallization of In-Ga-Zn-O films which are not c-axis-aligned can lead to formation of polycrystalline In-Ga-Zn-O thin films having spinel structures. The crystal structure of ZnInxGa2−xO4 in which Ga site of ZnGa2O4 is substituted by In was obtained by first-principle calculation. It has been revealed that the unitcell constants...
We succeeded in fabricating an In-Ga-Zn-O (IGZO) thin film which has a novel structure. We have shown that the IGZO thin film has a c-axis aligned crystalline structure (abbreviated below to CAAC-IGZO) as the detailed structural analysis. Besides, we have shown that the crystalline plane of the CAAC-IGZO structure is c-axis aligned over the entire area in the nano-order analysis. In addition, the...
An examination is made of the effect of the In-Ga-Zn-Oxide (IGZO) composition ratio on electric characteristics and reliability of IGZO FETs and confirmed that a higher content of In and a lower content of Ga in the IGZO enable better initial electric characteristics. However, an FET with a higher content of In in the IGZO, which is subjected to photoirradiation of a channel portion, shows an Id-Vg...
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