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The range distribution for energetic 400keV Er ions implanted in silicon-on-insulator (SOI) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The damage distribution and annealing behavior of implanted Er ions in SOI at the energy of 400keV with dose of 5×10 15 cm −2 were obtained by Rutherford backscattering technique. It has been...
We have demonstrated a 40-Gb/s optoelectronic transceiver in a quad small form-factor pluggable (QSFP) module. Each module includes a 4xlO-Gb/s, 0.13 μm CMOS silicon-on-insulator integrated optoelectronic transceiver chip co-packaged with a single, externally modulated CW laser.
A 4-wavelength DWDM optoelectronic transceiver, implemented in a 0.13mum CMOS SOI process, achieves an aggregate rate of 40Gb/s transmission over single fiber. The four channel WDM chip, operating all four Txs and Rxs in WDM configuration consumes -3.5W. This is at nominal operating conditions.
Monolithic integration of both photonic and electronic components operating at 10Gb/s in a 0.13mum SOI CMOS process for PowerPC processors is presented. A modulator uses free carrier plasma dispersion in a reverse-biased PIN optical phase shifter in a Mach-Zender interferometer. An AWG demultiplexer uses a forward-biased PIN phase shifter to compensate the optical path length improving the channel...
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