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Spin-torque transfer RAM (STT-RAM), a promising alternative to static RAM (SRAM) for reducing leakage power consumption, has been widely studied to mitigate the impact of its asymmetrically long write latency. However, physical effects of technology scaling down to 45 nm and below, in particular, process variation, introduce the previously unreported and alarming trends in read performance and reliability...
STT-RAM is an emerging NVRAM technology that promises high density, low energy and a comparable access speed to conventional SRAM. This paper proposes a hybrid L1 cache architecture that incorporates both SRAM and STT-RAM. The key novelty of the proposal is the exploition of the MESI cache coherence protocol to perform dynamic block reallocation between different cache partitions. Compared to the...
The recent successful integration of magnetic racetrack memory forecasts a new computing era with unprecedentedly high-density on-chip storage. However, racetrack memory accesses require frequent magnetic domain shifting, introducing overheads in access latency and energy consumption. In this paper, we evaluate and compare several different physical layout strategies and array organizations. From...
The racetrack memory technology utilizes magnetic domains along a nanoscopic wire to obtain ultra-high data storage density. The recent success in the planar racetrack nanowire promised its fabrication feasibility and future scalability, bringing more design challenges and opportunities. In this paper, we initialize the optimization of racetrack memory embracing design considerations across multiple...
Using the spin-transfer torque random access memory (STT-RAM) technology as lower level on-chip caches has been proposed to minimize leakage power consumption and enhance cache capacity at the scaled technologies. However, programming STT-RAM is a stochastic process due to the random thermal fluctuations. Conventional worst-case (corner) design with a fixed write pulse period cannot completely eliminate...
Spin-Transfer Torque Random Access Memory (STT-RAM) demonstrated great potentials as an universal memory for its fast access speed, zero standby power, excellent scalability and simplicity of cell structure. However, large process variations of both magnetic tunneling junction and CMOS process severely limit the yield of STT-RAM chips and prevent the massive production from happening. In this paper,...
In this work, we study the access (read and write) scheme of the newly proposed Multi-Level Cell Spin-Transfer Torque Random Access Memory (MLC STT-RAM) from both the circuit design and architectural perspectives. Based on the physical principles of the resistance state transition of MLC STT-RAM, we proposed a read circuitry based on Dichotomic search algorithm and three write schemes with various...
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