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In this study, double-channel AlGaN/GaN high electron mobility transistors are designed with a slant gate field plate to improve the device breakdown voltage. Sentaurus TCAD is used for device simulation. At the first stage, the slant gate field plate is compared with a regular gate field plate to study the reduction of the peak electric field at the gate edge. It is found that the slant gate field...
Quantum Key Agreement (QKA) signifies that two or more participants together generate a key and QKA has to satisfy the following conditions: (1) Every participant can change the key and the key is not decided by any participant individually. (2) Only participants can know the key, nonparticipants cannot get the key through illegal means. Because of the conditions of participating together, it makes...
This paper proposes a low power deblocking filter (DF) architecture with Horizontal Edge Skip Processing Architecture (HESPA) scheme that offers an intelligent edge skip aware mechanism in filtering the horizontal edges by adopting a four-stage pipeline and adaptive hybrid filtering order to boost the speed of DF process. The proposed architecture not only reduces more than 34% logic power consumption...
A new procedure to determine source/drain series resistance and effective channel length has been developed for MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered by differential and integration processes. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 μm. The parameters extracted with this...
A simple procedure to determine source/drain series resistance and effective channel length has been developed for advanced MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 ??m. The parameters extracted with this procedure have been validated...
This paper studies hydrogen diffusion in nitride-based Flash memory. Distorted capacitance-voltage ( C-V) curves were obtained when the programmed devices were baked in an environment of hydrogen at a temperature of 400 degC. Hydrogen may invade the edge of the device. The effectively trapped electrons were eliminated by the invading hydrogen. Elimination is responsible for a nonuniform distribution...
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