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This study examines different approaches to determining the chip failure rate that occurs due to dielectric cracking under C4 sites during chip joining. We show that testing of the strength of individual C4s by a single bump shear technique gives a strength distribution that is well described by a Weibull distribution with a Weibull modulus that lies in the range 10–20. Simulations of the spatial...
The root cause of degradation and failure in nanoscale logic and memory devices originates from discrete defects (traps) that are created in the ultra-thin dielectrics during fabrication (process-induced) and / or voltage and temperature stress (stress-induced). In order to probe the chemistry of every discrete trap in terms of its bond state, charge state, physical location, region of influence,...
Hard disk drives (HDDs) are among the most widely used information storage components in these digital times, since they were commercialized in late 1970s. The perpendicular magnetic recording (PMR) media using (CoCrPt)x(Metal Oxide)1−x magnetic alloys have reached an areal density of 700GB/in2 and beyond[1]. The current researches focus on achieving higher grain refinement and increasing uniaxial...
Perovskite manganite R1−xAxMnO3 (R=rare earth, A=alkaline earth) has been attracting great research interesting due to its magnetoelectronic phenomena such as colossal magnetoresistance (CMR), charge-orbital ordering, and metal-insulator transitions, etc.[1,2] In manganite superlattice, interfacial effects including cation intermixing, charge transfer, exchange coupling, strain and defect formation...
For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown...
The ∼20% Id,sat improvement is demonstrated successfully on the Si and Ge n-FinFETs with the implement of D-SMT stressor for the first time, based on the optimization of dislocation angle and the understanding of crystal re-growth velocities along different surface planes and directions in Si and Ge. The mobility enhancement ratio with D-SMT stressor in Ge n-FinFET (37%) is found to be larger than...
This paper discusses a thermal reliability testing experiment and failure analysis (FA) in 32nm SOI Si technology chip packages. Thermal performance of the TIM materials is monitored and physical failure analysis is performed on test vehicle packages post thermal reliability test. Thermomechanical modeling is conducted for different test conditions. TIM thermal degradation is observed at the chip...
In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress...
Place a Die breaking strength is related to the surface morphology of the die. Existing of the defects on the die backside makes die fracture becomes a more severe problem in the microelectronic package. In this study, impact of the die backside defects on the stress is investigated by mechanical theories. Finite element method and 3 point bending test are used to verify the theory prediction. Thin...
We describe interconnect features for Intel's 22nm high-performance logic technology, with metal-insulator-metal capacitors and nine layers of interconnects. Metal-1 through Metal-6 feature a new ultra-low-k carbon doped oxide (CDO) and a low-k etch stop. Metal-7 and Metal-8 use a low-k CDO. New materials and process optimization provide 13–18% capacitance improvement. Single-exposure patterning for...
The ability to improve the mechanical properties of a microelectronic package, including reducing the thermal-mechanical stress and increasing the die breaking strength is a long-sought goal in electrical assembly and packaging technology. Failure modes related with die backside stress caused by warpage or cosmetic defects may occur without a well control of die-backside stress. In this study, the...
Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in...
This document reports the performance of anti-PSMA monoclonal antibodies in microfludic devices for the isolation of circulating prostate cancer cells.
Dielectric breakdown in advanced gate stacks in state-of-the-art Si nanoelectronic devices has been one of the key front-end reliability concerns for further CMOS technology downscaling. In this paper, we present the latest findings in using physical analysis techniques such as transmission electron microscopy (TEM)/electron energy loss spectroscopy (EELS)/energy dispersive X-ray spectroscopy (EDS),...
Reliability study of high-κ (HK) gate dielectric based transistors has become imperative for the current and future CMOS technology nodes as the industry shifts towards replacement of conventional silicon oxynitride (SiON) with hafnium-based oxides. One of the key requirements of any oxide reliability study is a quantitative assessment of the time dependent dielectric breakdown (TDDB) lifetime using...
In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO2) have been replaced by physically thicker high-κ transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address...
A thermal interface material (TIM) is typically a compliant material with high thermal conductivity that is applied between a heat-generating chip and a heat spreader in an electronic package. For a high-conductivity polymeric TIM, the adhesion strength between the TIM and its mating interfaces is typically weak, making the TIM susceptible to degradation when subjected to environmental stresses. At...
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