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In this paper, we have revealed major implant process that improves for the mismatch on the 65nm CMOS technology. Two more effective experiments are been presented, i.e. threshold implant energy and species. As a result, the impact of threshold implant process on the matching characteristic has been demonstrated. In addition, the threshold implant of higher energy and heavy species are two unusual...
ZnO-based MOSFETs were fabricated in this study. The I-V curve of the source-drain ohmic contacts show. We can get the good ohmic performance by using the Ti/Al/Ti/Au metals and annealing at 525 ??C, 3 minutes. Then, we deposited the SiO2 layer by using photo-CVD system and the schematic diagram of photo-CVD system shows in figure 2.
In summary, we report the first experimental realization of PDs with high-k cap layer, In0.1Ga0.9N/HfO2, and then, we keep work to study variation of HfO2 thickness and annealed conditions were used to control and optimize the PDs characteristic.
In this research, effects of thermal annealing on the performance of AlInGaN Metal-Insulator-Semiconductor photodetectors have be investigated by I-V characteristics and responsivity measurement. In addition, Al0.25In0.04Ga0.71N MIS photodetectors with different SiO2 thickness were also be fabricated to verify the the influence of inserting SiO2 layer on performance of MIS photodetectors.
In this paper, it is found that the optimal STI process can effectively reduce bulk leakage from junction and this is very important for low power devices. Also, we found an optimal STI process to reduce standby current of SRAM. According to bulk current becomes worse with device width shrinkage and also increases standby current of SRAM, we used optimal STI process for step height, divot and corner...
Summary form only given. This paper analyzes the emission spectra of atmospheric microwave Ar-air plasma and He-air plasma at the range of 200 to 1000 nm; diagnoses the free oxygenic radicals of them. Results reveal that, free oxygenic radicals occupy large proportion of all elements in the spectra of Ar-air and He-air plasmas. OH free radicals are strong near the 309-314 nm band compared with He...
This paper diagnoses the emission spectra of the Ar plasmas, which are excited at different pressure from 0.1 to 0.8 atm, and Ar-air plasma in open air with a unique microwave plasma generator-APMPS+JET system. The results demonstrate that the previous excited atom stations die out obviously as air is added; various factors play a part in the transform of atomic spectra lines, such as energy input,...
The propagation property of microwave through chiral metamaterial based on a magnetic dimer is studied experimentally. Our results show two resonance peaks are obtained in the transmission spectrum, and they origin from the hybridization effect of magnetic resonance modes in this system. An optical activity is also observed in the transmission wave. Various elliptical polarization states appear in...
In this work, we optimise the structure of an uncooled directly modulated 1.3 mum GaInNAs ridge waveguide laser for high temperature operation. The static and dynamic performance of the optimised design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The optimised structure is shown to have a lower threshold current, higher efficiency, higher modulation bandwidth and...
In this work we have measured the lateral spontaneous emission profile for the lasers, using scanning near-field optical microscopy (SNOM). Since the near-field of the spontaneous emission maps the lateral carrier distribution in the active region, this measurement provides a way to directly measure the lateral diffusion. The obtained profile therefore represents the optical mode which is well confined...
We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 mum range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50 times 1250 mum2 broad area Fabry-Perot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength...
In this work, we optimize the thermal performance of a double quantum well GalnNAs ridge waveguide laser using an accurate in-house 2D electro-opto-thermal laser simulator. The simulator has shown good agreement with experiments after a detailed calibration procedure. Using calibrated material parameters, we investigate the influence of the p-cladding doping concentration on the heat generation within...
Nano-epitaxy has attracted great attention in the last several years. Theoretical study can date back to more than twenty years ago when Luryi and Suhir (LS) studied critical thickness of a strained epi layer grown on a ridged strip (Luryi, 1986). They used an analytic expression for strain and predicted that the critical thickness increased to infinity when the strip width was small enough (in the...
We demonstrate uncooled 2.5 Gb/s operation up to 110degC of 1.3 mum GaInNAs double quantum well lasers with low threshold current and excellent temperature stability.
We demonstrate uncooled 10 Gbps operation of 1.3 μm ridge waveguide GaInNAs lasers with a double quantum well active region up to 110°C. The low temperature sensitivity enables the use of a constant modulation voltage
In order to better understand the differences between lasers with GaAs and GaAsN barriers, this paper has experimentally compared their basic performance characteristics, including threshold currents and spectral gain characteristics. The laser with GaAsN barriers has a reduced N-content in the quantum well to achieve almost identical emission wavelengths. Otherwise the laser structures are the same...
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