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A Si3N4/SiO2 double-tunneling layer is incorporated in a MONOS memory device structure with high-k HfO 2 charge storage layer for NAND-type memory application. Fast erasure of charges trapped in the high-k layer is enabled by enhanced hole current, accomplishing a large memory window of 2.9 V with electrical stress at 17.5 V for 100 (as and at -18 V for 5 ms. Incorporation of 1.6-1.8 nm thick Si3N...
Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented
Multimedia wireless network QoS support has become one of the most important researches in recent years. IEEE wireless 802.11e is the most hopeful among these methods. However, 802.11e experiment performance metrics are essentially network-level measures. They represent the network state, not the perceptual quality of the end user. This paper presents an application-level study on the wireless 802...
The QoS support for multimedia on wireless network is one of the most important researches in recent years. IEEE wireless 802.11e is the most hopeful among these methods. However, the performance metrics used in 802.11e experiments are almost network-level measures. They represent the network state and not the perceptual quality of the end user. Besides, the wireless network is error prone and errors...
We demonstrate electrical properties of an advanced memory structure with high-k dielectric stack of HfAlO/HfSiO/HfXIO and p-type metal gate IrO2. Combining advantages of high-k HfAlO, good trapping capability of HfSiO, and high work function of the IrO2 gate, we were able to attain much better retention with 10-year DeltaVth decay ratio within 18%, higher erasing speed with DeltaVth of 3V within...
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