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Due to the feedback of free carriers to the electric field, branches with negative differential resistance (NDR) occur in high power devices. NDR usually leads to current filaments. These current filaments might be non-destructive if they move. Most critical effects are found if impact ionization occurs at the n--n+-junction with a positive electrical feedback to avalanche or dynamic avalanche at...
In this paper, a new diode structure with Inverse injection Dependency of Emitter Efficiency (IDEE) concept is presented which has been investigated by device simulation. The IDEE concept in combination with a Controlled Injection of Backside Holes (CIBH) cathode structure improves substantially the trade-off between surge current capability, turn-off losses and turn-off ruggedness. The IDEE diode...
Analyzing the dynamics of current filaments is essential for a correct understanding of SOA limitations. Current filaments can occur during the reverse-recovery period of p+-n--n+ diodes. In this work, we apply the results from an analysis of the plasma-front dynamics for the one-dimensional case to conditions under which current filaments appear in the depletion layers due to dynamic avalanche. We...
This brief describes the influence of switching conditions and a dynamic avalanche on the extraction of the charge-carrier plasma during the reverse-recovery period of p+-n--n+ diodes. The influence of the drift components and the diffusion components of the electron- and hole-current densities on the evolution of the plasma layer was investigated. The analysis shows that diffusion currents influence...
We investigate the current filamentation behavior during reverse recovery in high-voltage 3.3-kV silicon p+ - n- - n+ diodes with transient S-shape negative differential resistance characteristics. The transient I-U-bistability occuring in the reverse recovery period leads to a non-uniform, current distribution in the diodes when they are turned off with a high current rate di/dl. In this paper we...
We investigate the current filamentation behavior during reverse recovery in high-voltage 3.3-kV silicon p+ - n- - n+ diodes with transient S-shape negative differential resistance characteristics. The transient I -bistability occuring in the reverse recovery period leads to a non-uniform current distribution in the diodes when they are turned off with a high current rate di/dt. In this paper we compare...
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