The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The field dependence of oxide charge detrapping time in a 0.6 /spl mu/m DDD n-MOSFET subject to hot carrier stress was characterized. A series of oxide trap charging and discharging conditions were performed using GIDL current as a direct monitor of the transient characteristics of oxide charge detrapping. An analytical model accounting for the GIDL current transient was developed. The measured result...
Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two- dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant...
A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 μm. The importance of the...
Erasing gate current in various flash EEPROM structures has been characterized. The charge transport of gate current is composed of Fowler-Nordheim electron tunneling and/or band-to-band tunneling induced hot hole injection. Both of the mechanisms are analyzed in a two-dimensional simulation. Good agreement between experiment and simulation is obtained. The hot hole injection is found to be a dominant...
A two-dimensional transient simulation of the EPROM writing characteristics is presented. A Monte Carlo hot electron gate current model which accounts for Fowler-Nordheim tunneling and thermionic emission has been implemented in a general-purpose two-dimensional device simulator, PISCES IIB, as a post-processor. The simulation result is compared favorably with experimental data for channel lengths...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.