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For development of ZnO nanorods-based heterostructures an environmentally benign synthesis process and fabrication route are required. Zinc oxide nanorod arrays have been grown on (0001) sapphire substrates by a rapid hydrothermal method (in 15 min) from a solution of zinc sulfate and sodium hydroxide. Two different synthesis regimes have been identified which give different morphologies of depositions...
ZnO nanofibrous-based materials required for sensors and dye-solar cells have been grown on tin oxide/glass substrates by magnetron sputtering. Synthesis regimes have been identified that give nanoporous and nanofibrous morphologies of depositions as shown by SEM. The structural properties of the nanomaterial have been characterized by X-ray diffraction. Vibrational properties have been investigated...
This work presents a nanoplasmonic photoconductive antenna (NP-PCA) for high power terahertz emission. Plasmonically matched metal nanostructures are integrated on a photoconductive bow-tie type THz antenna by incorporating microfabrication and electron-beam lithography. The plasmonic resonance wavelength of metal nanostructure is matched with the optical wavelength of incident pulsed beam. Metal...
We present microscale self-assembly as a suite of techniques that promotes the electronics industry's initiative towards functional diversification and function densification, and two specific programmable self-assembly projects that are driven by real-world limitations and aspirations of present assembly and packaging technologies. Towards said goals, we demonstrate that our processes can improve...
Toward great flexibility in making advanced analog interfaces, a novel modular smart PIC technology platform for functional diversification is proposed. This technology platform offers high voltage capability, high current level, very large variety of integrable components, and process modular flexibility thorough diversification or simplification according to the different product application needs...
Research on high-k (HfO2) materials has been expanded significantly. However, MOSFETs with high-k gate dielectrics on silicon still have several problems with relatively low mobility of high-k devices in thin EOT regime compared to the universal curve. In this work, as an alternative of silicon substrate, InP and In0.53Ga0.47As has been studied. W e present the material and electrical characteristics...
In this paper, we present a novel electrostatic discharge (ESD) protection device which is, against the catastrophic ESD attack, activated as either a reverse-biased punchthrough bipolar junction transistor (BJT) or a forward-biased diode, depending on the polarity of the input pulse. Experimental data show that the new device is more efficient and area-effective than any other conventional one. It...
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