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Accelerated temperature lifetesting at Tchannel of 240, 255, and 270°C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 <; -1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1 × 10...
Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature life testing. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at...
For the first time, the sub-mW operation of InP HEMT X-band low-noise amplifiers on 4-inch InP wafer was demonstrated. With optimized non-alloyed ohmic contact, gate recess profile and epitaxial layer design, the InP HEMT achieves average peak transconductance of 1150 mS/mm at VDS = 0.3 V. The mean current cut off frequency is above 150 GHz at VDS = 0.3 V and IDS = 150 mA/mm. The developed low power...
A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable...
Four types of gate metallization were investigated to evaluate the manufacturability of 0.1 mum AlSb/InAs HEMTs. It has been found that device performance strongly depends on the gate metallization. This information is essential for the manufacturability of 0.1 mum AlSb/InAs HEMTs for ultralow-power applications.
The degradation mechanisms of 0.1 mum AlSb/InAs HEMTs subjected to elevated-temperature lifetesting at three temperatures in N2 atmosphere were investigated. Device degradation exhibits the increase of non-pinch-off drain current (IDS), the decrease of transconductance (gm) and the gate current (IG) increase. The IG increase was found to correlate with material degradation on the gate-recess and Al...
A 0.1 μm In02Al08Sb-InAs HEMT MMIC technology was developed for phased-array applications with ultralow-power and oxidation-free requirements. An In02Al08Sb layer was utilized to replace the upper AlSb layer in the conventional AlSb-InAs HEMT in order to mitigate the oxidation incurred by the AlSb layer. In this work, we have demonstrated excellent dc and rf performance on both devices and low-noise...
-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity...
Three-temperature lifetesting was performed to evaluate the reliability performance of 0.1 μm AlSb/InAs HEMT low noise amplifiers (LNAs) for ultralow-power applications. For the first time, the reliability performance of 0.1 μm AISb/lnAs HEMT LNAs was demonstrated. The results show a median time to failure of approximately 2x106 hours at Tjunction of 85°C with activation energy of 1.5 eV. High-reliability...
Uniform millimeter wave 0.1 mum InP HEMT MMICs (Ka-band, Q-band, W-band, and distributed amplifiers) on 100 mm InP substrates have been demonstrated. Moreover, high performance and high reliability have been achieved. The results indicate that the readiness of 100 mm InP HEMT technology for insertion to support military/space applications.
Gate sinking effect of 0.1 mum InAlAs/InGaAs/InP HEMT MMICs (with Pt/Ti/Pt/Au gate metals) subjected to elevated temperature lifetests has been investigated. The results show that Pt sinking is the dominant degradation mechanism caused by Pt diffusing into the In0.52Al0.4As Schottky barrier layer. Pt sinking explains the observed evolutions of Schottky diodes, Ids-Gm transfer characteristics, and...
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