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In this work a high-K MIM capacitor module has been described that has been shown to improve the frequency of microprocessors, stabilize the power supply noise of IOs and positively affect the resulting data eyes for high speed IO. Furthermore, improvements in high speed clocking are also achieved.
In this work a MIM capacitor used to decouple the internal power supply is shown. The 8fF/um2 planar MIM capacitors of the 90 nm SOI technology are formed by physical vapor deposition of alternating layers of HfO2 and Ta2O5 dielectrics between TaN electrodes.
A 90nm SOI microprocessor with massive application of high-k MIM decoupling capacitor modules is proven to increase the maximum frequency of the processor by close to 10%. Simulations predict reduced power supply noise leading to improvements in Fmax by close to the equivalent of a transistor node increase. Simulations of applying MIM decoupling capacitors to high-speed I/O and PLL circuits show that...
A reliable metal-insulator-metal (MIM) capacitor exceeding 250nF has been integrated into the copper/low-K backend of a high-performance 90nm SOI technology. The reduction of supply grid voltage transients has enhanced microprocessor performance by approximately 10% without increasing the chip area or power consumption
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